Dry Etching for Failure Analysis
Features
- Reactive Ion Etching System ES403 can etch wafers of up to 8-inch.
- ES403 can etch perform isotropic and highly selective anisotropic etching with high aspect ratio.
- Stable etch rate and excellent uniformity.
- User-friendly interface.
Etching Result
Evaluation of Etch Uniformity
Wafer Size: 8inches
A number of Measuring Points: 49
[Etched Thickness] i = [Film thickness before Etching] i - [Film thickness after Etching] i
[Etching Variation] i =([Etched Thickness] i - [Etched Thickness Average]) / [Etched Thickness Average]
Polyimide Etching
Process Gas: O2
Si O2 and SiN Etching
Process Gas: CF4 and O2
